首页> 外文学位 >High Performance Channelizers, Tunable Notch Filters, and Silicon-Based Antennas for RF to Millimeter-Wave Communication Systems.
【24h】

High Performance Channelizers, Tunable Notch Filters, and Silicon-Based Antennas for RF to Millimeter-Wave Communication Systems.

机译:用于射频到毫米波通信系统的高性能信道器,可调陷波滤波器和硅基天线。

获取原文
获取原文并翻译 | 示例

摘要

This thesis first presents a 26-channel channelizer based on the mammalian cochlea and covering the 20-90 MHz band. Each channel has a 6-pole frequency response with a constant absolute bandwidth of 1.4 MHz at 20-30 MHz, and a constant fractional bandwidth of 4.5+/-0.6% at 30-90 MHz, and is built entirely using lumped elements. Measurements show an S 11 -12 dB at 20-90 MHz, a loss of 4-7 dB, > 40 dB isolation between the channels, and agree well with simulations. The applications areas are in communication systems with very high levels of interferes and in defense systems.;In another project, tunable lumped-element bandstop filters for the UHF-band cognitive radio systems are presented. The 2-pole filters are implemented using lumped elements with both single- and back-to-back silicon varactor diodes. The single diode filter tunes from 470 to 730 MHz with a 16-dB rejection bandwidth of 5 MHz and a filter quality factor of 52-65. The back-to-back diode filter tunes from 511 to 745 MHz also with a 16-dB rejection bandwidth of 5 MHz and a quality factor of 68-75. Both filters show a low insertion loss of 0.3-0.4 dB. Nonlinear measurements at the filter null with Deltaf = 2 MHz show that the back-to-back diode filter results in 12-dBm higher third-order intermodulation intercept point (IIP3) than the single diode filter. A scaling series capacitor is used in the resonator arm of the back-to-back diode filter and allows a power handling of 25 dBm at the 16 dB rejection null. The cascaded response of two tunable filters is also presented for multi-band rejection applications, or for a deeper rejection null (> 36 dB with 0.6 dB loss at 600 MHz). The topology can be easily extended to higher-order filters and design equations are presented.;The third project presents on-chip slot-ring and horn antennas for wafer-scale silicon systems. A high efficiency is achieved using a 100 mum quartz superstrate on top of the silicon chip, and a low loss microstrip transformer using the silicon backend metallization. A finite ground plane is also used to reduce the power coupled to the TEM mode. The slot-ring and 1- l20 horn achieve a measured gain of 0-2 dBi and 6-8 dBi at 90-96 GHz, respectively, and a radiation efficiency of ∼50%. The horns achieve a high antenna gain without occupying a large area on the silicon wafer, thus resulting in a low cost system. The designs are compatible with either single or two-antenna transceivers, or and with wafer-scale imaging systems and power-combining arrays. To our knowledge, this is the highest gain on-chip antenna developed to-date.;Finally, differential on-chip microstrip and slot-ring antennas for wafer-scale silicon systems are presented. The antennas are fed at the non-radiating edge which is compatible with differential coupled-lines, and are built on a 0.13-mum CMOS process with a layout which meets all the metal density rules. A high radiation efficiency is achieved using a 100 mum quartz superstrate placed on top of the silicon chip. Both antennas achieve a measured gain of ∼3 dBi at 91-94 GHz, with a -10 dB S11 bandwidth of 7-8 GHz and a radiation efficiency of >50%. The designs are compatible with single and multi-element transceivers, and with wafer-scale imaging systems and power-combining arrays. To our knowledge, this is the first demonstration of high-efficiency on-chip differential antennas at millimeter-wave frequencies.
机译:本文首先提出了一种基于哺乳动物耳蜗并覆盖20-90 MHz频段的26通道信道发生器。每个通道具有6极点频率响应,在20-30 MHz时具有1.4 MHz的恒定绝对带宽,在30-90 MHz时具有4.5 +/- 0.6%的恒定分数带宽,并且全部使用集总元件构建。测量表明,在20-90 MHz时S 11 <-12 dB,损耗4-7 dB,通道之间的隔离度> 40 dB,与仿真非常吻合。应用领域是在干扰水平很高的通信系统和国防系统中。在另一个项目中,提出了用于UHF频段认知无线电系统的可调谐集总元件带阻滤波器。 2极点滤波器是通过将集总元件与单反和背对背的硅变容二极管实现的。单二极管滤波器从470MHz调谐到730MHz,16dB的抑制带宽为5MHz,滤波器的品质因数为52-65。背靠背二极管滤波器的调谐范围也从511MHz升至745MHz,16dB的抑制带宽为5MHz,品质因数为68-75。两个滤波器均显示出0.3-0.4 dB的低插入损耗。在Deltaf = 2 MHz的滤波器为零的情况下进行的非线性测量表明,背对背二极管滤波器比单个二极管滤波器产生更高的12 dBm三阶互调截点(IIP3)。定标串联电容器用于背对背二极管滤波器的谐振器臂中,并在16 dB抑制零位时允许处理25 dBm的功率。还介绍了两个可调滤波器的级联响应,用于多频带抑制应用,或用于更深的抑制零点(> 36 dB,600 MHz时损耗为0.6 dB)。该拓扑可以轻松扩展到高阶滤波器,并给出设计方程。第三项目介绍了用于晶圆级硅系统的片上缝隙环形天线和喇叭天线。在硅芯片顶部使用100微米石英覆盖层,以及使用硅后端金属化工艺的低损耗微带变压器,可实现高效率。有限的接地平面也用于降低耦合到TEM模式的功率。缝隙环和1-120喇叭在90-96 GHz时分别获得0-2 dBi和6-8 dBi的测量增益,辐射效率约为50%。喇叭在不占据硅晶片上大面积的情况下实现了高天线增益,从而导致了低成本系统。该设计与单天线或两天线收发器兼容,或者与晶圆级成像系统和功率组合阵列兼容。据我们所知,这是迄今为止开发的最高增益的片上天线。最后,提出了用于晶圆级硅系统的差分片上微带和缝隙环形天线。天线在与差分耦合线兼容的非辐射边缘馈电,并以0.13微米CMOS工艺构建,其布局符合所有金属密度规则。使用位于硅芯片顶部的100微米石英盖板可以实现高辐射效率。两条天线在91-94 GHz时均可实现约3 dBi的测量增益,其7-10 GHz的-10 dB S11带宽和> 50%的辐射效率。这些设计与单元素和多元素收发器以及晶圆级成像系统和功率合并阵列兼容。据我们所知,这是毫米波频率上高效片上差分天线的首次演示。

著录项

  • 作者

    Ou, Yu-Chin.;

  • 作者单位

    University of California, San Diego.;

  • 授予单位 University of California, San Diego.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 138 p.
  • 总页数 138
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号