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Study of Single-Event Transient Effects on Analog Circuits.

机译:对模拟电路的单事件瞬态影响的研究。

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摘要

Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implemented with CMOS technologies. The problem is getting worse with the technology scaling down. Radiation-hardening-by-design (RHBD) is a popular method to build CMOS devices and systems meeting performance criteria in radiation environment.;Single-event transient (SET) effects in digital circuits have been studied extensively in the radiation effect community. In recent years analog RHBD has been received increasing attention since analog circuits start showing the vulnerability to the SETs due to the dramatic process scaling. Analog RHBD is still in the research stage. This study is to further study the effects of SET on analog CMOS circuits and introduces cost-effective RHBD approaches to mitigate these effects.;The analog circuits concerned in this study include operational amplifiers (op amps), comparators, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs). Op amp is used to study SET effects on signal amplitude while the comparator, the VCO, and the PLL are used to study SET effects on signal state during transition time. In this work, approaches based on multi-level from transistor, circuit, to system are presented to mitigate the SET effects on the aforementioned circuits. Specifically, RHBD approach based on the circuit level, such as the op amp, adapts the auto-zeroing cancellation technique. The RHBD comparator implemented with dual-well and triple-well is studied and compared at the transistor level. SET effects are mitigated in a LC-tank oscillator by inserting a decoupling resistor. The RHBD PLL is implemented on the system level using triple modular redundancy (TMR) approach. It demonstrates that RHBD at multi-level can be cost-effective to mitigate the SEEs in analog circuits. In addition, SETs detection approaches are provided in this dissertation so that various mitigation approaches can be implemented more effectively. Performances and effectiveness of the proposed RHBD are validated through SPICE simulations on the schematic and pulsed-laser experiments on the fabricated circuits. The proposed and tested RHBD techniques can be applied to other relevant analog circuits in the industry to achieve radiation-tolerance.
机译:太空辐射可能会对微电子电路和系统(例如航天器电子设备)造成危害。高能粒子对电路和系统的瞬态影响可能会中断电子设备的运行或使系统崩溃。这种现象在互补金属氧化物半导体(CMOS)集成电路(IC)中尤为严重,因为大多数现代IC是采用CMOS技术实现的。随着技术的缩减,问题变得越来越严重。设计辐射强化(RHBD)是一种构建满足辐射环境中性能标准的CMOS器件和系统的流行方法。;辐射效应界已经广泛研究了数字电路中的单事件瞬态(SET)效应。近年来,由于模拟电路开始显示出由于过程规模的急剧变化而对SET造成的脆弱性,因此模拟RHBD受到了越来越多的关注。模拟RHBD仍处于研究阶段。这项研究是为了进一步研究SET对模拟CMOS电路的影响,并引入具有成本效益的RHBD方法来减轻这些影响。本研究涉及的模拟电路包括运算放大器(op amp),比较器,压控振荡器(VCO) )和锁相环(PLL)。运算放大器用于研究SET对信号幅度的影响,而比较器,VCO和PLL用于研究SET在过渡时间内对信号状态的影响。在这项工作中,提出了从晶体管,电路到系统的基于多级的方法,以减轻SET对上述电路的影响。具体来说,基于电路级的RHBD方法(如运算放大器)采用了自动调零消除技术。研究并用晶体管的水平比较了采用双阱和三阱的RHBD比较器。通过插入去耦电阻,可在LC槽型振荡器中缓解SET效应。 RHBD PLL使用三重模块冗余(TMR)方法在系统级别实现。它表明,多层次的RHBD可以有效降低模拟电路中的SEE。此外,本文还提供了SET检测方法,从而可以更有效地实施各种缓解方法。拟议的RHBD的性能和有效性通过SPICE仿真在电路原理图和脉冲激光实验上得到了验证。所建议和经过测试的RHBD技术可以应用于工业中的其他相关模拟电路,以实现辐射耐受性。

著录项

  • 作者

    Wang, Tao.;

  • 作者单位

    The University of Saskatchewan (Canada).;

  • 授予单位 The University of Saskatchewan (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 144 p.
  • 总页数 144
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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