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A pulsed DC gas flow hollow cathode.

机译:脉冲直流气流空心阴极。

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摘要

A new gas flow hollow cathode discharge source (GFHC) has been developed, characterized, and applied to thin film deposition by sputtering and low-temperature PECVD. Non-reactive and reactive sputtering processes were investigated using copper and aluminum targets, respectively. For the first time, pulsed DC power was applied to a GFHC in order to avoid arcing caused by electrode surface contamination, and to stabilize the discharge in general. The electrical characteristics of the source, the parameters of the remote plasma and its optical emission, were studied and compared to those of a DC powered GFHC.; We determined the electrical characteristics of the plasma, including the temporal behavior of the current and voltage under various conditions of pressure and inert gas flow through the cathode. The transition from a glow discharge mode to the hollow cathode mode was studied in an effort to determine the operating range of the GFHC. A capacitive current was discovered at the beginning of the on-time.; The properties of the remote plasma were investigated using averaged and time-resolved Langmuir probe and optical emission measurements. The distribution of the remote plasma density resembles the gas flow velocity distribution through the cathode. Plasma processes during off time (decaying plasma) and on-time (plasma reestablishment) were studied and compared to those in pulsed DC magnetron and high power inductively coupled glow discharges.; The dependence of the deposition rate, resistivity and thickness distribution of copper films dependence on pulse parameters, power, inert gas flow through the cathode and pressure have been studied. The thin film thickness distribution is governed by the distribution of the gas flow velocity, which can be calculated using laminar flow gas dynamics. In a pulsed DC GFHC system, the inert gas flow through the cathode prevents the penetration of the reactive gas from the chamber into the cathode. A special reactive gas delivery source placed near the substrate was used to alumina deposition.; The pulsed DC GFHC discharge is a reliable technology for sputter deposition of metallic and compound films. Scale-up of this technology and its application in industrial manufacturing is under way.
机译:已经开发出了一种新型的气流空心阴极放电源(GFHC),并将其应用于通过溅射和低温PECVD沉积薄膜。分别使用铜靶和铝靶研究了非反应性和反应性溅射工艺。第一次,将脉冲直流电施加到GFHC上,以避免由电极表面污染引起的电弧放电,并总体上稳定放电。研究了光源的电学特性,远程等离子体的参数及其光发射,并将其与直流供电的GFHC进行了比较。我们确定了等离子体的电特性,包括在各种压力和惰性气体流过阴极的条件下电流和电压的时间行为。为了确定GFHC的工作范围,研究了从辉光放电模式到空心阴极模式的过渡。在接通时间开始时发现了电容性电流。使用平均和时间分辨的Langmuir探针以及光发射测量来研究远程等离子体的特性。远程等离子体密度的分布类似于通过阴极的气流速度分布。研究了关闭时间(衰减等离子体)和开启时间(等离子体重建)的等离子体过程,并将其与脉冲直流磁控管和大功率感应耦合辉光放电中的等离子体过程进行了比较。研究了沉积速率,电阻率和铜膜厚度分布与脉冲参数,功率,通过阴极的惰性气体流量和压力之间的关系。薄膜厚度分布受气体流速分布的控制,可以使用层流气体动力学来计算。在脉冲直流GFHC系统中,惰性气体流经阴极会阻止反应性气体从反应室渗入阴极。放置在基材附近的特殊反应气体输送源用于氧化铝沉积。脉冲直流GFHC放电是一种用于溅射沉积金属和化合物膜的可靠技术。这项技术及其在工业制造中的应用正在扩大规模。

著录项

  • 作者

    Paduraru, Cristian.;

  • 作者单位

    Stevens Institute of Technology.;

  • 授予单位 Stevens Institute of Technology.;
  • 学科 Physics Fluid and Plasma.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 188 p.
  • 总页数 188
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;工程材料学;
  • 关键词

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