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Modeling transient response of PN junction diode under radiation beams considering nonlinear effects.

机译:考虑非线性效应的PN结二极管在辐射束下的瞬态响应建模。

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摘要

Diodes are used as dosimeter to measure the delivered dose from the radiation beams of linear accelerators used in the radiation therapy field. Diode sensitivity S, defined as charge collected per unit absorbed dose, has been found to increase with an increase in instantaneous dose rate r of the radiation beam. In order to calculate the dependence of S on r, one has to solve for the excess minority-carrier concentration Deltap (= Deltan) from the carrier transportation equation. This equation is a nonlinear partial different equation (PDE), with two variables of space coordinate x and time t. The nonlinear term in the PDE is the net recombination-generation (R-G) rate U. The historical solutions were either the transient solution from the linear PDE or the steady state solution from the nonlinear differential equation.; This dissertation solves the nonlinear PDE with simplified nonlinear term U. The analytical solution is the first to include both transient and nonlinearity at the same time.; The analytical solution for Deltap (x, t) from the PDE is used to derive the current density J p of the minority carriers and the diode sensitivity S. A computer software program has also been developed to numerically solve the non-simplified PDE. The agreement of the calculations for Deltap (x) and Jp (t) is excellent between the numerical and the analytical solutions, proving the analytical solution is legitimate. A theoretical model is established with the analytical solution to explain the r dependence of diode sensitivity S under pulsed radiation beam.; The sensitivity of several different types of diodes was measured with the 18 MV photon beam of a medical linear accelerator. The diode sensitivity from the experiment is compared with the calculations from both the analytical and the numerical solutions. The theoretical calculations yield the instantaneous dose rate dependence of the diode sensitivity. The agreement is generally good between the theory and the experiments. The results are discussed and possible error sources are analyzed.
机译:二极管用作剂量计,以测量放射线治疗领域中使用的线性加速器的放射线束的剂量。已经发现,定义为每单位吸收剂量收集的电荷的二极管灵敏度S随着辐射束的瞬时剂量率r的增加而增加。为了计算S对r的依赖性,必须从载流子传输方程中求解多余的少数载流子浓度Deltap(= Deltan)。该方程是一个非线性偏微分方程(PDE),具有两个空间坐标x和时间t的变量。 PDE中的非线性项是净复合生成(R-G)速率U。历史解既可以是线性PDE的瞬态解,也可以是非线性微分方程的稳态解。本文用简化的非线性项U求解了非线性PDE。解析解决方案是第一个同时包含瞬态和非线性的解决方案。来自PDE的Deltap(x,t)的解析解可用于导出少数载流子的电流密度J p和二极管灵敏度S。还开发了计算机软件程序,以数值方式求解非简化的PDE。数值解和解析解之间的Deltap(x)和Jp(t)计算吻合极佳,证明了解析解是合理的。建立了带有解析解的理论模型来解释在脉冲辐射束下二极管灵敏度S的r依赖性。使用医用线性加速器的18 MV光子束测量了几种不同类型的二极管的灵敏度。将实验中二极管的灵敏度与解析解和数值解的计算结果进行了比较。理论计算得出了二极管灵敏度的瞬时剂量率依赖性。理论和实验之间的一致性通常很好。讨论结果并分析可能的错误源。

著录项

  • 作者

    Shi, Jie.;

  • 作者单位

    Florida Institute of Technology.;

  • 授予单位 Florida Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.; Physics Condensed Matter.; Physics Radiation.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 94 p.
  • 总页数 94
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;原子核物理学、高能物理学;
  • 关键词

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