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Development of Thin-Film Based Microdevices and Process Enhancement for Making the Same.

机译:基于薄膜的微器件的开发和制造工艺的增强。

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摘要

Microdevices driven by Lead Zirconate Titanate (PbZrxTi1-xO3 or PZT) have received wide attention recently, because they could potentially outperform other MEMS devices in terms of bandwidth, energy density, and actuation strength. PZT integrated microdevice is undoubtedly promising, but its development and fabrication still remains challenging. To cope with such challenges and develop a well functional microdevice with adoption of thin-film PZT in sub-millimeter range requires thorough understand on its properties and fundamental behaviors both in theoretical and practical way.;First of all, I developed and improved the microfabrication procedure of PZT thin film microsensor and microactuator. Such procedure includes modified sol-gel preparation, stable fabrication of bottom electrode with proper micro surface texture, microdevice wire bonding and packaging. Meanwhile, during the study I characterized the patterns of thin-film PZT defects. Through parametric study, the degree of bottom electrode porosity is revealed to be the most critical parameter surpassing others strongly affects the deposited thin-film PZT quality. A second parametric study is simultaneously carried out to ensure the fabrication repeatability of low porous bottom electrode. These contributions not only greatly improve the yield of thereafter lab-fabricated thin-film PZT but also provide an effective way for quick prediction of ongoing PZT fabrication yield based on the judgment of one parameter.;Fabrication of satisfied thin-film PZT could be difficult, however, measuring material piezoelectric properties of just-prepared PZT could be even challenging. Although there are many currently available solutions, they are either complicated or expensive. Most important, they are not applicable for thin-film PZT application. I developed an easy, low cost, but effective method to deal with the thin film piezoelectric coefficient d33 through a mini impact hammer approach. Such method is proved to be suitable for both bulk and thin-film PZT. More practically, it can be adopted as a fast way for lab-prepared PZT quality evaluation.;PZT deposition requires a Pt/Ti bi-layer bottom electrode to be annealed retaining condensed structure. The heat treatment will inevitably pull electrode to be porous. It is well known that electrode with pores can greatly affect thin-film PZT material properties. For such reason, I designed and fabricated a special nonporous bottom electrode which inherits the porous electrode surface micro texture but with pores sealed. Although due to the limited experimental results no strong evidence shows new electrode surpasses traditional one in all ways, it contains large effective electrode area by covering the pores earns it better chance to outperform porous electrode.
机译:钛酸锆酸铅(PbZrxTi1-xO3或PZT)驱动的微器件近来受到广泛关注,因为它们在带宽,能量密度和驱动强度方面有可能超过其他MEMS器件。 PZT集成微器件无疑是有前途的,但其开发和制造仍然具有挑战性。为了应对此类挑战并开发出功能良好的微器件,并采用亚毫米级的薄膜PZT,需要从理论和实践角度全面了解其性能和基本性能。首先,我开发并改进了微加工PZT薄膜微传感器和微执行器的程序。这样的过程包括改进的溶胶-凝胶制备,具有适当的微表面纹理的底部电极的稳定制造,微器件引线键合和封装。同时,在研究过程中,我描述了薄膜PZT缺陷的图案。通过参数研究,发现底部电极的孔隙度是最关键的参数,超过其他参数会严重影响沉积的薄膜PZT的质量。同时进行第二项参数研究,以确保低多孔底部电极的制造可重复性。这些贡献不仅极大地提高了随后实验室制造的薄膜PZT的成品率,而且为基于一个参数的判断快速预测正在进行的PZT的成品率提供了有效的方法。然而,测量刚制备的PZT的材料压电性能甚至可能具有挑战性。尽管当前有许多可用的解决方案,但是它们要么复杂要么昂贵。最重要的是,它们不适用于薄膜PZT应用。我开发了一种简单,低成本但有效的方法,可通过微型冲击锤方法来处理薄膜压电系数d33。事实证明,这种方法适用于块状和薄膜PZT。更实际地,它可以用作实验室准备的PZT质量评估的快速方法。PZT沉积需要对Pt / Ti双层底部电极进行退火以保持凝结的结构。热处理将不可避免地将电极拉成多孔的。众所周知,带孔的电极会极大地影响薄膜PZT材料的性能。因此,我设计并制造了一种特殊的无孔底部电极,该电极继承了多孔电极表面的微观结构,但具有密封的孔。尽管由于有限的实验结果,没有强有力的证据表明新电极在所有方面都超过了传统电极,但是由于其覆盖了孔,因此它具有较大的有效电极面积,因此它有更好的机会胜过多孔电极。

著录项

  • 作者

    Guo, Qing.;

  • 作者单位

    University of Washington.;

  • 授予单位 University of Washington.;
  • 学科 Engineering Mechanical.;Nanotechnology.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 140 p.
  • 总页数 140
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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