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Ultra-thin ceramic films for low-temperature embedding of decoupling capacitors into organic printed wiring boards.

机译:超薄陶瓷膜,用于将去耦电容器低温嵌入到有机印刷电路板中。

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摘要

As microprocessors move towards higher frequencies, lower operating voltages and higher power consumption, supplying noise-free power to the ICs becomes increasingly challenging. Decoupling capacitors with low inductance interconnections are critical to meet the power supply impedance targets. A variety of capacitors are used today to provide decoupling at different frequencies. Surface-mount multi-layer ceramic capacitors currently used at package level provide decoupling only till about 100 MHz because of the component and lead inductances. Embedding thin film capacitors into the package can expand the operating range of package level capacitors to low GHz frequencies. Thin films with capacitance of several microfarads and organic-compatible processes are required for embedding decoupling capacitors at package level.; The organic-compatible high-permittivity materials available today do not provide adequate capacitance for the application on hand. While ferroelectric thin films can provide the required capacitance, processing temperatures over 300° C are required to achieve crystalline films with high permittivity. Hence, there is a need to develop novel materials and processes to integrate decoupling capacitors into currently prevalent organic packages. To this end, hydrothermal synthesis and sol-gel synthesis of BaTiO3 films were explored in this study. BaTiO3 films were synthesized by low temperature hydrothermal conversion of metallic titanium. Hydrothermal process parameters such as bath molarity and temperature were optimized to obtain thin films with grain sizes close to 100 nm, at temperatures less than 100° C. Novel post-hydrothermal treatments were developed to improve the dielectric properties of the films. Sol-gel process requires sintering at >700° C to obtain crystalline BaTiO3 films. However, the films can be synthesized on free-standing copper foils and subsequently integrated into organic packages using lamination. Prevention of foil oxidation during sintering is critical. Nickel and titanium barriers explored in this study were ineffective due to instabilities at the interfaces. Hence, films were synthesized on bare copper foils by controlling the oxygen partial pressure during sintering. Using these techniques BaTiO3 thin films with capacitances of 400--1000 nF/cm2 and breakdown voltages of 6--15 V were demonstrated. The films synthesized via either techniques exhibited stable dielectric properties up to 8 GHz owing to fine grain sizes.
机译:随着微处理器向更高的频率,更低的工作电压和更高的功耗发展,向IC提供无噪声电源变得越来越具有挑战性。具有低电感互连的去耦电容器对于满足电源阻抗目标至关重要。今天,使用各种电容器来提供不同频率的去耦。由于元件和引线电感,目前在封装级使用的表面贴装多层陶瓷电容器只能提供约100 MHz的去耦。将薄膜电容器嵌入封装中可以将封装级电容器的工作范围扩展到低GHz频率。在封装级嵌入去耦电容器需要具有数微法拉电容和有机兼容工艺的薄膜。当今可用的有机相容性高介电常数材料不能为手边的应用提供足够的电容。尽管铁电薄膜可以提供所需的电容,但要获得具有高介电常数的结晶膜,则需要超过300°C的处理温度。因此,需要开发新颖的材料和工艺以将去耦电容器集成到当前流行的有机封装中。为此,在本研究中探索了水热合成BaTiO3薄膜和溶胶-凝胶合成。通过金属钛的低温水热转化合成了BaTiO3薄膜。优化水浴工艺参数,例如浴液的摩尔浓度和温度,以在小于100°C的温度下获得晶粒尺寸接近100 nm的薄膜。开发了新型后水热处理以改善薄膜的介电性能。溶胶-凝胶工艺需要在> 700°C的温度下烧结以获得结晶的BaTiO3薄膜。但是,可以在独立的铜箔上合成薄膜,然后使用层压将其整合到有机包装中。防止烧结过程中的箔氧化至关重要。由于界面的不稳定性,本研究中探索的镍和钛阻挡层无效。因此,通过控制烧结过程中的氧分压,在裸铜箔上合成了薄膜。使用这些技术证明了BaTiO3薄膜的电容为400--1000 nF / cm2,击穿电压为6--15 V.通过两种技术合成的薄膜由于晶粒细小,在高达8 GHz的频率下表现出稳定的介电性能。

著录项

  • 作者

    Balaraman, Devarajan.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 160 p.
  • 总页数 160
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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