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The investigation of submicron copper electrochemical deposition bath chemistries and ageing process.

机译:亚微米铜电化学沉积浴化学性质和时效过程的研究。

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Because of the lower electrical resistance of copper interconnects and void-free deposition capability in submicron features, copper electroplating has been widely accepted and implemented in chip manufacturing. Void-free deposition of copper can be achieved by proper control of the dilute organic additives added to the copper bath. Two organics additives, PEG and MPS, were studied in acidic copper sulfate solutions containing chloride, and with linear sweeping voltammetry (LSV), chronoamperometry and electrochemical impedance spectroscopy (EIS). The experimental results from the electrochemical measurements were used to provide a better understanding of the interacting mechanism between the various species in the solution during the copper deposition process.; The interaction between Cu2+, Cl- and MPS was investigated, and a peak near 1.0 Hz in the impedance curve was observed when chloride ions were added into the electrolyte due to the reduction of Cu2+ by Cl- to form CuCl complex. In addition, complexation of MPS with Cu2+ and MPS with CuCl led to a peak at 0.1 Hz. Poly(ethylene) glycol (PEG) was also studied and a large inductive response was observed in the impedance Nyquist plot, indicating the adsorption of PEG-Cu and PEGCu-Cl at the copper surface. Reaction mechanisms related to the electrodeposition, complexation and adsorption reactions were proposed and implemented with an EIS model. The mechanisms involving the interactions between Cu2+, Cl-, MPS and PEG were discussed in this study as well.; A degradation study using a proprietary copper electrodeposition bath was performed and analyzed by the EIS technique. It was observed that the signal at 10 mHz of the real part and 100 mHz of the imaginary part of the impedance can effectively follow the condition of the bath compared to an EIS complete frequency measurement. Impedance data during bath ageing with a 10% bleed & feed of the copper bath demonstrated that control of the by-product level can increase the bath quality and prolong the bath life. If sufficient data on copper superfilling morphology can correlated with EIS measurements during ageing, it is possible to develop the EIS technique as an on-line indicator and improve the performance of copper superfilling in submicron vias and trenches.
机译:由于铜互连的较低电阻和亚微米特征的无空隙沉积能力,铜电镀已被广泛接受并应用于芯片制造中。铜的无空隙沉积可通过适当控制添加到铜浴中的稀有机添加剂来实现。在含有氯化物的酸性硫酸铜溶液中,采用线性扫描伏安法(LSV),计时电流法和电化学阻抗谱(EIS),研究了两种有机添加剂PEG和MPS。电化学测量的实验结果用于更好地了解铜沉积过程中溶液中各种物质之间的相互作用机理。研究了Cu2 +,Cl-和MPS之间的相互作用,当由于Cl-还原Cu2 +形成CuCl配合物而向电解质中添加氯离子时,在阻抗曲线中观察到1.0Hz附近的峰。另外,MPS与Cu2 +的复合以及MPS与CuCl的复合导致在0.1 Hz处出现一个峰。还研究了聚乙二醇(PEG),在奈奎斯特阻抗图中观察到较大的电感响应,表明PEG-Cu和PEGCu-Cl在铜表面的吸附。提出了与电沉积,络合和吸附反应有关的反应机理,并用EIS模型进行了实现。本研究还讨论了涉及Cu2 +,Cl-,MPS和PEG之间相互作用的机制。使用专有的铜电沉积浴进行了降解研究,并通过EIS技术进行了分析。观察到,与EIS完整频率测量相比,阻抗的实部10 mHz和虚部100 mHz处的信号可以有效地遵循浴的条件。使用10%的流失和进料量的铜浴,在浴老化过程中的阻抗数据表明,控制副产物水平可以提高浴质量,并延长浴寿命。如果在老化过程中有足够的关于铜超填充形态的数据与EIS测量相关,则有可能将EIS技术开发为在线指示器,并改善亚微米过孔和沟槽中铜的超填充性能。

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