Effet de l'acide silicotungstique sur les proprietes des couches minces de sulfure de cadmium depose par bain chimique sur substrat de silicium.

摘要

This work treats the development and the characterization of chemically deposited cadmium sulphide thin films on a silicon substrate.; The first chapter is a historical literature review on photovoltaic and optoelectronic materials based on CdS thin films.; The second chapter describes the methods of preparation and characterization of the deposited CdS films on the Si substrates.; X-ray diffraction (XRD) characterization of the films has shown that non-annealed and annealed films deposited with or without STA are polycristalline.; The annealing and the presence of STA in the deposition bath have no effect on the mixture nature of the CdS phase. The grain size determined from XRD pattern was 348 A before annealing and 130 A after annealing. It was shown that the presence of the STA in the deposition bath has no effect in this behaviour. The unusual decrease of the grain size after annealing could be due to a reversible phase transformation of the film at this heat treatment temperature (360°C).; From the results obtained here it was concluded that CdS deposited with STA on Si provides a junction which have a higher absorption coefficient in the UV region than those prepared without STA. This opens some interesting application for new photodetector in the UV region. (Abstract shortened by UMI.)