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High-output-power photodetectors for analog optical links and avalanche photodiodes with undepleted absorber.

机译:高输出功率光电探测器,用于模拟光链路和吸收体未耗尽的雪崩光电二极管。

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摘要

High-power photodetectors are crucial components in analog optical links for applications, such as cable televisions, phased array antennas, antenna remoting, photonic signal processing, and future wireless communication systems. The link performance, which includes link gain, noise figure, and spurious free dynamic range, can be improved by increasing the optical carrier power and using a high-power photodetector. In this dissertation, an analysis of the limiting factors of photodiode output power is presented. Based on this analysis, improved photodiode structures that can suppress space charge effect and loading effect were designed and experimentally studied. Record high values of RF output power were obtained. In order to suppress laser relative intensity noise (RIN), which limits the dynamic range of the link at high optical power, high-power top-illuminated and evanescently-coupled waveguide balanced photodetectors were demonstrated. High saturation current, broad bandwidth, high responsivity and good broadband common mode rejection ratio were achieved. Bonding photodiode to Si using a gold intermediate layer was demonstrated to improve the device heat handling capability. The responsivity of the bonded photodiode was also increased significantly due to the resonant cavity introduced by the gold bonding layer.; Avalanche photodiodes (APDs) are key components for optical communication, imaging and various photon counting applications. In the second part of this work, a novel avalanche photodiode structure with undepleted absorber was proposed and experimentally studied. Theoretical analysis shows that this structure could have orders of magnitude lower dark current than the APDs with depleted absorber. It also has the advantage of high low-gain bandwidth and no multiplication in the absorber. For the fabricated devices, low dark current performance was observed. Because of this property, the structure has potential to be used as a high performance photon counter.
机译:高功率光电检测器是模拟光链路中至关重要的组件,可用于诸如有线电视,相控阵天线,天线远程处理,光子信号处理以及未来的无线通信系统之类的应用中。链路性能,包括链路增益,噪声系数和无杂散动态范围,可以通过增加光载波功率和使用高功率光电检测器来改善。本文对光电二极管输出功率的限制因素进行了分析。基于此分析,设计并实验研究了可以抑制空间电荷效应和负载效应的改进型光电二极管结构。获得了创纪录的RF输出功率值。为了抑制激光相对强度噪声(RIN),该噪声限制了高光功率时链路的动态范围,展示了高功率顶部照明和e逝耦合的波导平衡光电探测器。实现了高饱和电流,宽带宽,高响应度和良好的宽带共模抑制比。使用金中间层将光电二极管键合到Si可以提高器件的热处理能力。由于金键合层引入的谐振腔,键合光电二极管的响应度也显着提高。雪崩光电二极管(APD)是光通信,成像和各种光子计数应用程序的关键组件。在这项工作的第二部分中,提出了一种新型的雪崩光电二极管结构,该结构具有不耗尽的吸收体,并进行了实验研究。理论分析表明,这种结构的暗电流可能比吸收器耗尽的APD低几个数量级。它还具有高低增益带宽和吸收器无倍增的优势。对于制造的器件,观察到低的暗电流性能。由于这种特性,该结构具有用作高性能光子计数器的潜力。

著录项

  • 作者

    Li, Ning.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 170 p.
  • 总页数 170
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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