This project presents a self-testing and self-repairing strategy for ultra-high capacity memories. The self-testing and self-repairing structure applies tests that allow to locate faults and repair them without any external assistance from either test engineer or test equipment. This method will drastically improve the yield and reduce the production cost of embedded memories. The efficiency of self-testing and self-repairing strategy is supported by a hierarchical memory organization.; The redundant memory cells are introduced at different levels of hierarchy. At the lowest level of hierarchy, redundant words are introduced. If the local self-repairing logic can repair all the faults at the local level, the entire memory system can be restored to its fullest intended capacity. However, if a memory block has an excessive number of faults such that the local self-repairing logic is not able to restore its intended capacity at the local level, this memory block must be excluded from being accessed during normal operations. Any attempt to access this faulty memory block will be diverted to a functional memory block.; A prototype memory chip of 4096 words by 4 bits with fault-tolerance has been designed and manufactured in CMOS 0.18 mum technology. Although the chip has a relatively modest storage capacity, it incorporates all the required self-testing and self-repairing structures. The memory array is divided into 4 blocks of 1024 words by 4 bits. Each block contains 2 redundant words. A redundant memory block is added at the top level. (Abstract shortened by UMI.)
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