Silicon-based millimeter-wave front-end development for multi-gigabit wireless applications.

摘要

With rapid advances in semiconductor technologies and packaging schemes, wireless products have become more versatile, portable, inexpensive, and user friendly over last few decades. However, the ever-growing demand of consumers to share information efficiently at higher speeds requires higher data rates, increased functionality, lower cost, and more reliability. The 60-GHz-frequency band, with 7 GHz license-free bandwidth addresses, such demands, and promises a low-cost multi-Gbps wireless transmission with a power budget in the order of 100 mW.;This dissertation presents the systematic development of key building blocks and integrated 60-GHz-receiver solutions. Two different approaches are investigated and implemented in this dissertation: (1) low-cost SiGe-based direct-conversion low-power receiver front-end utilizing gain-boosting techniques in the front-end low-noise amplifier, and (2) CMOS-based heterodyne receiver front-end suitable for high-performance single-chip 60 GHz transceiver solution. The ASK receiver chip, implemented using 0.18 mum SiGe, presents a complete antenna-to-baseband multi-gigabit 60 GHz solution with the lowest reported power budget (25 pJ/bit) to date. The subharmonic direct conversion front-end, implemented using 0.18 mum SiGe, presents excellent conversion properties with a 4 GHz DSB RF bandwidth. On the other hand, the CMOS heterodyne implementation of the 60 GHz front-end receiver, targeted towards a robust, single-chip, high-performance, low-power, and integrated 60 GHz transceiver solution, presents the most wideband receiver front-end reported to date. Finally, different multi-band and tunable millimeter-wave circuits are presented towards the future implementation of cognitive and multi-band millimeter-wave radio.