Low-Temperature grown Gallium Arsenide on Silicon by using Migration-Enhanced Epitaxy

机译：通过迁移增强外延在硅上低温生长砷化镓

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GaAs were grown by the migration-enhanced epitaxy (MEE) method on vicinal (001) Si substrates oriented 4 ° off towards [110] at low temperature. Investigations of crystalline and optical properties of the grown GaAs/Si were carried out by the methods of X-ray diffraction (XRD) and low-temperature photoluminescence (PL). The possible cause for tilting in the GaAs grown at low-temperature is discussed.

机译：GaAs是通过迁移增强外延（MEE）方法在低温下沿朝向[110]方向偏离4°的邻近（001）Si衬底生长的。通过X射线衍射（XRD）和低温光致发光（PL）的方法对生长的GaAs / Si的晶体和光学性质进行了研究。讨论了在低温下生长的砷化镓倾斜的可能原因。

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《World Conference on Photovoltaic Energy Conversion;European Photovoltaic Solar Energy Conference;Photovoltaic Science and Engineering Conference;IEEE Photovoltaic Specialist Conference》|2018年|264-267|共4页
会议地点 Waikoloa Village(US)
作者
Yu-Cian Wang; Akio Yamamoto; Nobuaki Kojima; Yoshio Ohshita; Masafumi Yamaguchi;
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Toyota Technological Institute Nagoya 468-8511 Japan;

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Gallium arsenide; Silicon; Substrates; Physics; Epitaxial growth; X-ray scattering; Lattices;

机译：砷化镓；硅;基材；物理;外延生长； X射线散射；格子;

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专利

1. Silicon‐Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site Distribution [J] . Spitzer W. G., Panish M. B. Journal of Applied Physics . 1969,第10期

机译：镓解决方案中生长的掺硅砷化镓砷：硅的现场分布
2. An energetic study on the formation of self-assembled indium arsenide nanostructures grown on indium gallium arsenide/indium phosphide and gallium arsenide substrates [J] . F Shi, Kuo-Lih Chang, K C Hsieh Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems . 2007,第1期

机译：在砷化铟镓/磷化铟和砷化镓衬底上生长的自组装砷化铟纳米结构形成的有力研究
3. Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride [J] . Gergova Rositsa, Butcher Kenneth Scott Alexander, Binsted Peter W., Journal of Vacuum Science & Technology . 2014,第3期

机译：InN在氧化镓上外延生长以及在氮化镓上改善的迁移增强余辉外延生长的初步结果
4. Low-Temperature grown Gallium Arsenide on Silicon by using Migration-Enhanced Epitaxy [C] . Yu-Cian Wang, Akio Yamamoto, Nobuaki Kojima, IEEE World Conference on Photovoltaic Energy Conversion . 2018

机译：通过使用迁移增强的外延硅在硅上的低温生长镓砷化镓
5. Gallium arsenide/aluminum(x)-gallium(1-x)arsenide quantum well lasers grown on gallium arsenide and silicon by molecular beam epitaxy. [D] . Chen, Howard ZeHua. 1990

机译：砷化镓/铝（x）-砷化镓（1-x）量子阱激光器通过分子束外延生长在砷化镓和硅上。
6. Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy [O] . Wondwosen Metaferia, Kevin L. Schulte, John Simon, -1

机译：出版商更正：氢化物气相外延生长砷化镓太阳能电池的速度超过300 µm h-1
7. Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy. [O] . Pon Russell Michael. 1991

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。

Low-Temperature grown Gallium Arsenide on Silicon by using Migration-Enhanced Epitaxy

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