NOVEL CMP TECHNIQUE FOR COPPER SURFACE FINISHING WITH FULLERENE NANO-PARTICLE

摘要

The main results obtained are as follows:rn(1) The effect of chemicals contained in slurry such as BTA, H_2O_2 and chelating agent are investigated by the static etch rate experiments so that the effect of chemical reaction in machining mechanism is confirmed.rn(2) The effect of temperature on chemical reaction is investigated also by the static etch rate. The escalation of temperature of the solution excites the wet etching reaction.rn(3) Two kinds of poly-hydroxylated fullerene are applied as abrasive grains in slurry. Slurry with C_(60)(OH)_(36) · 8H_2O planarizes the copper surface well while another does not.rn(4) The relation between machining time and RMS using slurry with C_(60)(OH)_(36) · 8H_2O was investigated. It is concluded that highly planarized surface is obtained with an increase in machining time (i.e. 0.72nm RMS of 25μm~2 at 300sec).rnThese resluts indicate that our developed slurry polishes copper surface with low roughness taking advantageous of fullerene nano particles.