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More Than Density: Pattern Dependencies in the Copper Era

机译:不仅仅是密度:铜时代的模式依赖

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摘要

This paper explores causes and effects of pattern dependencies in copper interconnect variability, specifically thickness variability related to electro-chemical deposition (ECD) and chemical-mechanical polishing (CMP). Various pattern dependencies of these processes are outlined, showing they consist of more than density, which is the typical concern addressed in the design process. The interplay between ECD and CMP is described, as well as the effects of this interplay on final copper thickness variation. We then show differences between dependencies on test chips and product chips. Consequently, we discuss problems with existing test chip designs and outline a second-generation test chip with additional structures known to be causes of variation. The difficulties in attributing pattern dependencies in copper to simplistic layout parameters are highlighted. It is then discussed whether design rules based on these simplistic parameters are becoming obsolete. Finally, it is suggested that full-chip copper process modeling provides a comprehensive solution addressing copper thickness variability.
机译:本文探讨了铜互连可变性(特别是与电化学沉积(ECD)和化学机械抛光(CMP)相关的厚度可变性)中与图案有关的原因和影响。概述了这些过程的各种模式相关性,表明它们不仅包含密度,而且是设计过程中要解决的典型问题。描述了ECD和CMP之间的相互作用,以及该相互作用对最终铜厚度变化的影响。然后,我们显示了对测试芯片和产品芯片的依赖性之间的差异。因此,我们讨论了现有测试芯片设计所存在的问题,并概述了第二代测试芯片,该芯片具有已知的引起变化的其他结构。突出了将铜中的图案依赖性归因于简单的布局参数的困难。然后讨论基于这些简单参数的设计规则是否已过时。最后,建议全芯片铜工艺建模提供解决铜厚度可变性的综合解决方案。

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