Investigation on Quartz Crucibles for Monocrystalline Silicon Ingots for Solar Cells

摘要

This study presents a new testing method to analyze the bubble content and distribution in quartz crucibles for monocrystalline silicon ingots. Two different types of silica (SiO_2) crucibles have been investigated, before and after use during Czochralski (Cz) silicon ingot production for solar cells. Samples have been cut from three different positions along the crucible wall and then investigated by X-ray tomography, optical microscopy and scanning electron microscopy. The unused samples were heat-treated at 1400 ℃ for 4 h in Ar at 15 mbar. It is observed that the crucible bubbles grow in size and density during the Cz process. More bubbles are detected closer to the inner part of the crucible wall after use in the Cz process. The results also indicate that there are some differences in quality between different crucible producers and that bubble formation and growth are significantly affected by the Cz process parameters, such as temperature and time.