Lateral phosphorus content variation in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy

摘要

Surface migration of Group III atoms during MBE grwoth has been investigated by many researchers, but there has been no report on the surface migration of the group V atoms. In previous work, we investigated P contents of GaAsP layers simultaneously grown on (100) and (n11)A GaAs substrates (n chemical bounds 3, 4, 5) by MBE with the use of As_4 and P_2 molecular beam[1], and found that (n11)A GaAsP layers showed larger P contents than the (100) GaAsP layer. Especially, (411)A GaAsP layer had the largest P content among the samples. In this work, we observed, for the first time, the lateral profiles of P contents in GaAsP layers grown on (100) GaAs channeled substrates (CSs) with (n11)A side-slope regions (n chemical bounds 3, 4, 5)by MBE, and surface migration of As atoms between (n11)A and (100) planes was investigated by analyzing the observed P content profiles.