A Qualitative Stress-Based Model for Silicon Oxide Wafer Planarization

摘要

As the feature size requirements for semiconductor wafers continue to decrease, chemical mechanical polishing (CMP) is becoming a key technology for microprocessor manufacturing. Chemical mechanical polishing has the capability to achieve adequate local and global planarization on patterned and blanket wafers by selective removal of protruding features on the wafer surface. This removal is achieved by a combination of mechanical and chemical interactions occurring while the wafer is rotated against a pad, while immersed in aqueous slurry containing an abrasive agent.