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Cu CMP ON ORBITAL TOOL: PHILOSOPHY, CONCEPTS AND IMPLEMENTATION

机译:Cu CMP on Orbital Tool:哲学,概念和实现

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Dual Damascene Cu (Cu2D) is increasingly becoming the process of choice for IC technology. It will use Cu for both plugs and wiring. The Cu2D manufacturing sequence includes multiple use of CMP for both dielectric planarization and for shaping plugs/wires, thereby making CMP an enabling operation. Orbital polishing is known as an effective metal-CMP technique. The advantages of orbital CMP include high material removal uniformity (@3 mm EE from film edge), planarization efficiency, high throughput, small footprint, and low cost of ownership. This paper discusses objectives, philosophy and concepts of Cu CMP and summarizes SpeedFam-IPEC's experience in Cu CMP R&D with orbital planarizers (AvantGaard 676 and 776).
机译:双大马士革铜(Cu2D)越来越成为IC技术的首选工艺。它将Cu用作插头和接线。 Cu2D的制造过程包括将CMP多次用于介电平面化和插头/导线整形,从而使CMP成为可能。众所周知,轨道抛光是一种有效的金属CMP技术。轨道式CMP的优势包括高的材料去除均匀性(距薄膜边缘EE距离为3 mm),平面化效率,高生产率,占地面积小和拥有成本低。本文讨论了Cu CMP的目标,理念和概念,并总结了SpeedFam-IPEC在使用轨道平面化剂(AvantGaard 676和776)进行Cu CMP研发中的经验。

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