首页> 外文会议>Symposiumon Nanotribology and Nanotechnology For 1 Tbit/in~2, Oct 21-24, 2001, San Francisco, California >Comparison of Energetic Carbon Deposition Processes for Use as Ultra-thin Disk Overcoats
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Comparison of Energetic Carbon Deposition Processes for Use as Ultra-thin Disk Overcoats

机译:用作超薄圆盘涂层的高能碳沉积工艺的比较

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摘要

Three different processes, Plasma Enhanced CVD (PECVD), Ion Beam (IB), and Cathodic Arc (CA) have been used to deposit highly energetic carbon films in the 2 -10 nm thickness range in commercial, high throughput disk manufacturing tools. The deposition conditions used are typical of those required for disk manufacturing. Raman spectroscopy, I-V measurements, nanoindentation, and AFM based scratch testing have been used to characterize the structural, electrical, and mechanical properties of the films. The measured maximum hardness for the PECVD and IBD films are 28 and 25 GPa, respectively, and found to be influenced by the hardness of the softer substrates for the 70 - 120nm films available for measurement. The scratch resistance of the CAC films is ~2x the scratch resistance of the IBD films and 25% greater than the PECVD films. Addition of nitrogen to the films produced by both the PECVD and IB techniques reduces the hardness of the films. Both the Raman and I-V data suggest increasing concentrations of sp~2 bonding result from these nitrogen additions.
机译:等离子增强CVD(PECVD),离子束(IB)和阴极电弧(CA)这三种不同的工艺已被用于在商业,高通量磁盘制造工具中沉积2 -10 nm厚度范围内的高能碳膜。所使用的沉积条件是磁盘制造所需的典型沉积条件。拉曼光谱,IV测量,纳米压痕和基于AFM的划痕测试已用于表征薄膜的结构,电气和机械性能。 PECVD和IBD膜的最大测得硬度分别为28 GPa和25 GPa,并且发现可测量的70-120nm膜受较软基板硬度的影响。 CAC膜的耐刮擦性约为IBD膜的耐刮擦性的2倍,比PECVD膜大25%。在通过PECVD和IB技术生产的薄膜中添加氮气会降低薄膜的硬度。拉曼和IV数据均表明,这些氮的添加导致sp〜2键浓度增加。

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