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Nanoindentation of atomically modified surfaces

机译:原子修饰表面的纳米压痕

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Nanoindentation studies on metal and semiconducting surfaces often display excursions in the load-displacement curves. These displacement excursions have been attributed to phase transitions, oxide breakthrough, surface contamination effects, and dislocation nucleation under the indenter tip. We have shown recently that displacement excursions were present for nanoindentation on single crystal Au(111), (110) and (100), and were attributed to dislocation nucleation since all other phenomena were ruled out. We present our recent results that have been aimed at understanding the effects of surface modification at the nanoscale on dislocation nucleation. The effects of modifying the Au surface with electrochemically deposited metal monolayers (Pb and Ag), with an electrochemically deposited oxide monolayer and an electrochemically reconstructed surface will be presented. Hardness differences as great as a factor of 3 have been observed for these surfaces. These experiments are unique in that they were carried out under electrochemical control where strict control of the surface cleanliness can be maintained.
机译:在金属和半导体表面上进行的纳米压痕研究通常会在载荷-位移曲线中显示出偏移。这些位移的偏移归因于相变,氧化物穿透,表面污染效应以及压头尖端下的位错成核。我们最近已经表明,位移偏移存在于单晶Au(111),(110)和(100)上的纳米压痕中,并且归因于位错成核,因为排除了所有其他现象。我们提出了我们最近的结果,旨在了解位错成核的纳米级表面改性的影响。将介绍用电化学沉积的金属单层(Pb和Ag),电化学沉积的氧化物单层和电化学重建的表面修饰Au表面的效果。这些表面的硬度差高达3倍。这些实验是独特的,因为它们是在电化学控制下进行的,其中可以严格控制表面清洁度。

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