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Synthesis of Boron-Rich Metal Borides and Their Thermoelectric Properties

机译:富硼金属硼化物的合成及其热电性能

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Polycrystalline metal borides AlMgB_(14), CaB_6, and MB_2 (M: transition metals) were synthesized and their thermoelectric properties were examined. Single phase of orthorhombic AlMgB_(14), which contains B_(12) icosahedral clusters as building blocks, was obtained at sintering temperatures between 1573 K and 1823 K. Seebeck coefficient (α) and electrical conductivity (σ) of the phase were about 500 (μV/K) and 10~(-1) (1/Ωm) at room temperature, respectively. These values are comparable to those of metal-doped - rhombohedral boron. Synthesized AlB_2-type diborides (MB_2; M=Ti, V, Cr, and Mn) exhibited metallic conduction. The MB_2's α varied with number of valence electrons, and showed a maximum α in VB_2. The variation was similar to that predicted for pseudogap system. The CaB_6 also possessed metallic conduction, but the α of the phase was as large as 200 (μV/K) with negative sign.
机译:合成了多晶金属硼化物AlMgB_(14),CaB_6和MB_2(M:过渡金属),并研究了它们的热电性能。在1573 K和1823 K之间的烧结温度下获得了正交相AlMgB_(14)的单相,其中包含B_(12)二十面体簇作为构建基块。该相的塞贝克系数(α)和电导率(σ)约为500室温下分别为(μV/ K)和10〜(-1)(1 /Ωm)。这些值可与金属掺杂的菱面体硼相媲美。合成的AlB_2型二硼化物(MB_2; M = Ti,V,Cr和Mn)表现出金属导电性。 MB_2的α随价电子数的变化而变化,并且在VB_2中显示出最大α。该变化与伪间隙系统的预测相似。 CaB_6也具有金属导电性,但该相的α高达200(μV/ K),带有负号。

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