Atomistic modeling of the ion implantation step within a 2D process simulator

摘要

2D calculations of as-implanted dopent profiles are performed using a new module of the process simulator DIOS which is based on the binary collision code Crystal-TRIM. Examples derived from MOS and trench technology are considered. Good lateral and depth resolution is achieved within an acceptable computing time by combining a trajectory splitting algorithm with a method for the lateral duplication of ion trajectories.