Structure and chemistry of Ti overlayers on alpha -Al_2O_3(0001)

机译：Ti-Al_2O_3（0001）上Ti覆盖层的结构和化学性质

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Ti thin films were grown by molecular-beam epitaxy (MBE) on alpha -Al_2O_3(0001) substrates.During room temperature deposition, in the very initial growth stage, AES investigations revealed a chemical reaction between the Ti and the alpha =Al_2O_3 substrate. An analysis of the AES data based on simple assumptions showed that approx 2 monolayers of Ti are oxidized. However, HRTEM analysis indicated an atomically smooth, incoherent interface, without a reaction layer. Reflection high-energy electron diffraction (RHEED) analysis revealed an epitaxial orietnation relationship (0001)<2110> Ti || (0001)<1010> Al_2O_3 between Ti and alpha -Al_2O_3 (0001).

机译：Ti薄膜是通过分子束外延（MBE）在alpha -Al_2O_3（0001）衬底上生长的。在室温沉积过程中，在最开始的生长阶段，AES研究表明Ti与alpha = Al_2O_3衬底之间发生了化学反应。基于简单假设对AES数据进行的分析表明，大约2个Ti单层被氧化。但是，HRTEM分析显示原子上光滑，不连贯的界面，没有反应层。反射高能电子衍射（RHEED）分析显示了外延取向关系（0001）<2110> Ti || Ti和alpha -Al_2O_3之间的（0001）<1010> Al_2O_3（0001）。

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《Symposium on Polycrystalline Thin Films - Structure, Texture, Properties and Applications III March 31-April 4,1997, San Francisco, California, U.S.A》|1997年|p.137-142|共6页
会议地点 San Francisco CA(US)
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S.Bernath; T.Wagner; S.Hofmann; M.Ruhle;
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中图分类物理学;
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Structure and chemistry of Ti overlayers on alpha -Al_2O_3(0001)

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