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Insulator-metal transition in nanostructured Ni-Al thin films

机译:纳米结构Ni-Al薄膜中的绝缘体-金属过渡

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The electrical resistance of Ni-Al alloy thin films prepared by dc magnetron sputtering process was found to be abnormally high at room temperature. However, when heated at elevated temperatures, the resistance dropped significantly, exhibiting a remarkable negative temperature coefficient of resistance (TCR). The phenomenon was found to be substrate-independent. Cross-sectional transmission electron microscopy revealed that the films were essentially nanocrystalline and porous in nature. Analysis of the current density-electric field characteristics yielded a satisfactory agreement with either the space charge limited or the Poole-Frenkel models for electrical conduction. The negative TCR effect diminishes and the usual metallic resistance is restored in thicker films, probably due to reduction in particle separation and further coalescence of neighbouring crystallites.
机译:发现通过直流磁控溅射工艺制备的Ni-Al合金薄膜的电阻在室温下异常高。然而,当在高温下加热时,电阻显着下降,表现出显着的负电阻温度系数(TCR)。发现该现象与底物无关。横截面透射电子显微镜显示该膜本质上是纳米晶体并且是多孔的。对电流密度-电场特性的分析与空间电荷限制或Poole-Frenkel模型的导电性产生了令人满意的一致性。 TCR的负面影响减小,较厚的薄膜恢复了通常的金属电阻,这可能是由于颗粒分离的减少以及相邻微晶的进一步聚结所致。

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