首页> 外文会议>Symposium on Nanoparticulate Materials, Nov 26-29, 2001, Boston, Massachusetts, U.S.A. >Electrical characterization of nanostructured carbon films produced by Supersonic Cluster Beam Deposition
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Electrical characterization of nanostructured carbon films produced by Supersonic Cluster Beam Deposition

机译:超音速簇束沉积制备纳米结构碳膜的电学表征

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Electrical conduction in nanostructured carbon (ns-C) films produced by deposition of a supersonic beam of neutral carbon clusters has been studied. The d.c. conduction properties of these films have been measured in-situ during the deposition process and ex-situ as a function of the temperature in vacuum and in ambient of different gases (H_2, N_2, CH_4, He). The ns-C films exhibit an ohmic behavior with a room temperature resistivity in the range 10MΩcm-1GΩcmdepending on the growth and storage conditions. Conductivity vs. temperature measured in vacuum in the range 300-400K is characterized by activation energies in the range 0.3-0.7eV, the current response does not differ significantly in gas atmosphere.
机译:已经研究了通过沉积中性碳簇的超音速束产生的纳米结构碳(ns-C)薄膜中的导电性。直流电这些膜的导电特性已在沉积过程中进行了现场测量,并根据真空中以及不同气体(H_2,N_2,CH_4,He)的环境温度进行了异位测量。 ns-C膜表现出欧姆特性,室温电阻率在10MΩcm-1GΩcm范围内,具体取决于生长和存储条件。真空中在300-400K范围内测得的电导率与温度的关系是活化能在0.3-0.7eV范围内,在气体气氛中电流响应没有显着差异。

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