MICROSTRUCTURE OF PHYSICAL VAPOUR DEPOSITED TI-SI-N COATINGS

机译：物理气相沉积TI-SI-N涂层的微观结构

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The influence of Si on the microstrucure of Ti-Si-N coatings was studied, since it controls the mechanical properties of the coatings. At low Si-contents columnar {111}-textured TiN grains form. Increasin the Si-content to >4at% causes a transition to equiaxed {200}-textured TiN grains. The equiaxed TiN grains reveal grain diameters of ～6 nm for coatings containing 11 at% Si.

机译：研究了硅对Ti-Si-N涂层微观结构的影响，因为它控制了涂层的机械性能。在低Si含量下，形成柱状{111}织构的TiN晶粒。 Si含量增加到> 4at％会导致过渡到等轴{200}织构的TiN晶粒。等轴TiN晶粒的含Si含量为11 at％的涂层的晶粒直径约为〜6 nm。

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《Symposium on Nanoparticulate Materials, Nov 26-29, 2001, Boston, Massachusetts, U.S.A.》|2001年|p.175-180|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Florian Kauffmann; Gerhard Dehm; Eduard Arzt; Veit Schier; Sascha Henke; Alaexander Schattke; Thomas Beck;
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Max Planck Institut fuer Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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MICROSTRUCTURE OF PHYSICAL VAPOUR DEPOSITED TI-SI-N COATINGS

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