ITO/a-Si:H schottky photodiode with low leakage current and high stability

机译：具有低漏电流和高稳定性的ITO / a-Si：H肖特基光电二极管

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We report the design, fabrication, and characterization of an indium tin oxide/hydrogenated amorphous silicon (ITO/a-Si:H) Schottky photodiode base on room temperature deposition of ITO. The optical transmittance of the ITO is larger than 80

机译：我们报告了在室温下沉积ITO的铟锡氧化物/氢化非晶硅（ITO / a-Si：H）肖特基光电二极管的设计，制造和表征。 ITO的透光率大于80

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《Symposium on Flat-Panel Displays and Sensors-Principles, Materials and Processes held April 4-9, 1999, San Francisco, California, U.S.A.》|1999年|p.231-236|共6页
会议地点 San Francisco CA(US)
作者
qinghua Ma; Arokia Nathan; R.V.R.Murthy;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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机译：低泄漏电流a-Si：H / a-SiC：H n-i-p光电二极管，带Cr / a-SiNx前触点
2. Low Leakage Current ZnO Nanowire Schottky Photodiodes Built by Dielectrophoretic Contact [J] . Pau Jose Luis, Waters Joseph, Rivera Elmer, Electron Device Letters, IEEE . 2015,第8期

机译：通过介电接触构建的低泄漏电流ZnO纳米线肖特基光电二极管
3. Large area GaN Schottky photodiode with low leakage current [J] . S. Aslam, R.E. Vest, D. Franz, Electronics Letters . 2004,第17期

机译：低漏电流的大面积GaN肖特基光电二极管
4. Ito/a-Si:H schottky photodiode with low-leakage current and high stability [C] . Qinghua Ma, Arokia Nathan, R. V. R. Murthy Symposium on flat-panel displays and sensors-principles, materials and processes . 2000

机译：ITO / A-SI：H肖特基光电二极管，具有低漏电流和高稳定性
5. Metallic precipitate contribution to generation and recombination currents in pn junction devices and in MOS capacitors via the Schottky effect. [D] . Negoita, Mihai Dan. 2003

机译：金属沉淀物通过肖特基效应对pn结器件和MOS电容器中的产生和复合电流产生影响。
6. Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity [O] . Youngmin Lee, Deuk Young Kim, Sejoon Lee 2019

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8. Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes; Final rept [R] . Folkes, P. A., Little, J., Svensson, S., 2008

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ITO/a-Si:H schottky photodiode with low leakage current and high stability

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