Fabrication of a-Si:H TFT's AT 120 deg C on flexible polyimide substrates

摘要

The fabrication of large-area thin-film transistor (TFT) arrays on thin flexible plastic substrates requires deposition of thin film layers at relatively low temperatures since the upper working temperature of low-cost plastic films should not exceed approx 200 deg C. In this paper, we report a fabricatioon process of a-Si:H TFTs at 120 deg C on flexible polyimide substrates for large-area imaging applications.