A high-voltage hydrogenated amorphous silicon thin-film transistor for reflective active-matrix cholesteric LCD

摘要

A high-voltage hydrogenated amorphous silicon thin film transistor (HV a-Si:H TFT) with thick double layer gate insulator (approx 0.95 mu m) has been developed for refelective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 mu m thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-to-source and drain-tosource biases up to 100V without any serious leakage current degradaton and device breakdown.