TEXTURED DIAMOND FILMS ON Si AND Cu SUBSTRATES BY HFCVD TECHNIQUE

摘要

Textured growth of diamond on non-diamond substrates created special interest in diamond thin film technology. In this investigations we report polycrystalline textured diamond growth on silicon (Si) and copper (Cu) substrates. The diamond films have been grown by the hot filament chemical vapor deposition technique. Prior to diamond deposition on Si (100) substrates are pretreated with 2 μm diamond powder and Cu substrates are pretreated by various approaches : by modifying the substrate surface by laser irradiation and by intermediate TiN ceramic layer coating. Oriented diamond films are grown on Si substrates by creating a temperature gradient across the substrate. The structural analysis is done by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. Highly oriented (100) diamond films are grown on Si substrates. While there is no diamond growth on the laser modified substrate, highly faceted polycrystalline diamond crystals are shown to grow on the TiN buffered Cu substrates.