DX-centers in CdTe and ZnTe observed by locally sensitive probe atoms

摘要

Heavily In-doped CdTe and ZnTe crystals are investigated using perturbed γγ-angular correlation experiments. By means of characteristic electric field gradients, it is shown that in the Cd (Zn) poor regime, the compensation is governed by A-center formation. After annealing in Cd (Zn) rich atmosphere, the formation of DX-centers is observed and identified as the prevailing compensation mechanism in the Cd (Zn) rich regime.