Abstract: In manufacturing devices used in the data storage, semiconductor, and flat panel display industries, thin layers of materials are deposited on a particular substrate. These films may consist of semiconductors, dielectrics, polymers, dyes, (photoresist, resin, etc.), color filters, and metal films. In addition to silicon, substrates may consist of glass, quartz, poly-carbonate, or PET. In order to optimize the performance of these devices, an effective thin film characterization method is needed that can measure these thin film structures. We will present a technique that determines, thickness, spectra of n and k from 190 to 900 nm, E$-g$/, and interface roughness of the 'film/substrate' combinations used in the aforementioned industries. This technique is based on wide-band spectrophotometry, combined with spectral analysis incorporating the Forouhi-Bloomer dispersion equations for n and k. The technique offers an excellent signal to noise ratio even in the deep UV wavelength range (below 350 nm) and takes 1 second for the entire measurement. !2
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