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Synthesis and Characterization of Double-Doped Bismuth Oxide Electrolytes for Lower Temperature SOFC Application

机译:低温SOFC应用中双掺杂氧化铋电解质的合成与表征

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摘要

High ionic conductivity double-doped bismuth oxide materials were synthesized using solid state and wet chemical methods to achieve lower total doping while maintaining phase stability. The ionic conductivity for Dy-Gd stabilized bismuth oxide (DGSB), Dy-W stabilized bismuth oxide (DWSB), and Dy-Ce stabilized bismuth oxide (DCSB) at 650℃ are measured to be 0.94 S/cm, 0.53 S/cm, and 0.45 S/cm respectively. The nanopowder forms were incorporated into a bilayer electrolyte and successfully sintered dense onto a prefabricated anode and single electrolyte substrate. DGSB achieved the highest power density of 1.31 W/cm~2, twice that of the single-doped erbium stabilized bismuth oxide case with the same configuration (0.60 W/cm~2) as a result in the improvement in conductivity over the single-doped case.
机译:使用固态和湿化学方法合成了高离子电导率的双掺杂氧化铋材料,以在保持相稳定性的同时实现较低的总掺杂。 Dy-Gd稳定的氧化铋(DGSB),Dy-W稳定的氧化铋(DWSB)和Dy-Ce稳定的氧化铋(DCSB)在650℃下的离子电导率经测量为0.94 S / cm,0.53 S / cm ,分别为0.45 S / cm。将纳米粉末形式掺入双层电解质中并成功地致密地烧结到预制的阳极和单个电解质基底上。 DGSB的最高功率密度为1.31 W / cm〜2,是具有相同配置的单掺杂稳定氧化铋外壳(0.60 W / cm〜2)的两倍,其结果是导电性比单掺杂的情况。

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  • 来源
    《Solid state ionic devices 10》|2014年|135-141|共7页
  • 会议地点 Cancun(MX)
  • 作者单位

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20794, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20794, USA,Daegu Gyeongbuk Institute of Science and Technology, Republic of Korea;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20794, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20794, USA;

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  • 正文语种 eng
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