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Session 25 overview: Non-volatile memory solutions: Memory subcommittee

机译:会议25概述:非易失性存储器解决方案:存储器小组委员会

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摘要

Strong market demands drive a diverse range of non-volatile memory technologies that show continued increases in density, reliability, and performance. This year, the leading-edge process node for NAND Flash is scaled down to the sub-20nm regime, enabling the world's highest density of 128Gb. To maintain high reliability without performance degradation, solid-state-drive (SSD) controllers are being used for NAND Flash in advanced process nodes. Embedded Flash is addressing the automotive industry that requires high reliability. Finally, emerging memories such as Resistive RAM (ReRAM) devices are being pursued for future applications.
机译:强劲的市场需求推动了各种各样的非易失性存储技术的发展,这些技术显示出密度,可靠性和性能的不断提高。今年,NAND闪存的领先工艺节点已缩小至20nm以下制程,实现了全球最高密度的128Gb。为了在不降低性能的情况下保持高可靠性,固态驱动器(SSD)控制器已用于高级过程节点中的NAND闪存。嵌入式闪存正在解决要求高可靠性的汽车行业。最终,诸如电阻式RAM(ReRAM)设备之类的新兴存储器正在为未来的应用所追寻。

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