首页> 外文会议>Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International >A 20mW 61dB SNDR (60MHz BW) 1b 3rd-order continuous-time delta-sigma modulator clocked at 6GHz in 45nm CMOS
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A 20mW 61dB SNDR (60MHz BW) 1b 3rd-order continuous-time delta-sigma modulator clocked at 6GHz in 45nm CMOS

机译:在45nm CMOS中时钟频率为6GHz的20mW 61dB SNDR(60MHz BW)1b 3 rd 阶连续时间delta-sigma调制器

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Continuous-Time ΔΣ Modulators are a popular architecture choice for ADCs in deep-submicron processes [1-4]. The maximum sampling rate is set by Excess Loop Delay (ELD) considerations. ELD comprises the comparator latency, feedback DAC delay (DEM delay etc.) and any additional delay due to parasitics. For a wideband 1b modulator clocking at high speeds (multi-GHz), the key challenge is modulator stability due to large ELD set by comparator speed limitations and integrator parasitic poles. This paper describes circuit techniques to minimize ELD and a compensation scheme that ensures modulator stability given a 1-clock-period ELD. These techniques have enabled the design of a 3rd-order 1b modulator clocked at 6GHz in 45nm CMOS.
机译:连续时间ΔΣ调制器是深亚微米工艺中ADC的一种流行架构选择[1-4]。最大采样率由多余环路延迟(ELD)考虑因素设置。 ELD包括比较器延迟,反馈DAC延迟(DEM延迟等)以及由于寄生引起的任何其他延迟。对于高速(multi-GHz)的宽带1b调制器时钟,关键的挑战是调制器的稳定性,这是由于比较器速度限制和积分器寄生极点设置了较大的ELD所致。本文介绍了将ELD最小化的电路技术以及在给定1时钟周期ELD的情况下确保调制器稳定性的补偿方案。这些技术已经实现了在45nm CMOS中时钟频率为6GHz的3阶1b调制器的设计。

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