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Fabrication Options and Operation Principle for Single Crystal Silicon Vibratory Ring Gyroscope

机译:单晶硅振动环陀螺仪的制作选项和工作原理

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Four different approaches for the construction of a single crystal silicon vibratory ring gyroscope were investigated.All of them require deep trench etching (DRIE)of silicon, anodic bonding of silicon structures to a glass wafer, and adissolve silicon wafer process. In the first approach, regular single crystal silicon was used as the starting sensorstructural material. Heavy boron diffused silicon (B++Si) was formed followed by anodic bonding to the glass plate. Theundoped silicon was then dissolved and the device structure was fabricated by deep trench etching of the B++Si. Due tothe slow boron diffusion process, this approach severely limits the attainable thickness of the device structure. In thesecond approach, deep trench etching was carried out first followed by boron diffusion. In order to reduce RIE lag andboron diffusion time, the larger features were subdivided into smaller ones before DRIE process. We found that RIE lagstill existed which had a detrimental effect on the sensor performance. In the third approach, silicon-on-insulator (SOI)wafer was used and the sensor structures were built in the Si-epi layer by DRIE. Because of the very slow etch rate ofSiO2 in the DRIE process, RIE lag can be avoided. However, the associated footing problem makes the devicedimensional control difficult. In the fourth approach, a layer of epi-GeB++Si on silicon wafer was used to build thesensor structures. The fabrication process was similar to that used in the third approach. Both RIE lag and footingproblems were avoided.In the operation of the vibratory ring gyroscope, it is highly desirable of having the resonant frequencies around thering to be isotropic. In this work, theoretical and experimental studies were conducted aiming at achieving the isotropyof the resonant frequency of the single crystal silicon ring, which has an orientation dependent modulus of elasticity.We found that for odd flexural vibration modes, the resonant frequencies of the ring were isotropic, whereas, for evenmodes they became anisotropic.
机译:研究了四种不同的构造单晶硅振动环陀螺仪的方法,它们都需要对硅进行深沟槽刻蚀(DRIE),将硅结构阳极键合到玻璃晶圆上以及溶解硅晶圆工艺。在第一种方法中,常规的单晶硅被用作起始的传感器结构材料。形成重硼扩散硅(B ++ Si),然后阳极键合到玻璃板上。然后溶解未掺杂的硅,并通过对B ++ Si进行深沟槽刻蚀来制造器件结构。由于硼扩散过程缓慢,这种方法严重限制了器件结构的可达到厚度。在第二种方法中,首先进行深沟槽蚀刻,然后进行硼扩散。为了减少RIE滞后和硼扩散时间,在DRIE处理之前将较大的特征细分为较小的特征。我们发现RIE滞后的存在对传感器性能有不利影响。在第三种方法中,使用绝缘体上硅(SOI)晶圆,并通过DRIE在Si-epi层中构建传感器结构。由于在DRIE工艺中SiO2的蚀刻速率非常慢,因此可以避免RIE滞后。但是,相关的基础问题使设备尺寸控制变得困难。在第四种方法中,硅晶片上的Epi-GeB ++ Si层用于构建传感器结构。制造过程类似于第三种方法中使用的过程。避免了RIE滞后问题和立足点问题。在振动环形陀螺仪的操作中,非常需要使环周围的谐振频率各向同性。在这项工作中,进行了理论和实验研究,旨在实现单晶硅环的共振频率的各向同性,该各向异性具有与取向有关的弹性模量。我们发现,对于奇数弯曲振动模式,该环的共振频率为各向同性,而对于偶数模式,它们变为各向异性。

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