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Development of silicon microforce sensors integrated with double meander springs for standard hardness test instruments

机译:集成双曲折弹簧的硅微力传感器的开发,用于标准硬度测试仪器

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摘要

Silicon microforce sensors, to be used as a transferable standard for micro force and depth scale calibrations of hardness testing instruments, are developed using silicon bulk micromachining technologies. Instead of wet chemical etching, inductively coupled plasma (ICP) cryogenic deep reactive ion etching (DRIE) is employed in the sensor fabrication process leading to more precise control of 300 μm deep structures with smooth sidewall profiles. Double meander springs are designed flanking to the boss replacing the conventional rectangular springs and thereby improving the system linearity. Two full p-SOI piezoresistive Wheatstone bridges are added on both clamped ends of the active sensors. To realize passive force sensors two spring-mass elements are stacked using glue and photoresist as joining materials. Correspondingly, although plastic deformation seems to occur when the second spring is contacted, the kink effect (i.e., abrupt increase of stiffness) is obviously observed from the first test of the passive stack sensor.
机译:硅微力传感器是使用硅批量微机械加工技术开发的,可作为硬度测试仪器的微力和深度刻度校准的可转移标准。代替湿法化学蚀刻,在传感器制造过程中采用了感应耦合等离子体(ICP)低温深反应离子蚀刻(DRIE),从而可以更精确地控制300μm深结构的光滑侧壁轮廓。双曲折弹簧设计成侧翼,代替了传统的矩形弹簧,从而改善了系统的线性度。在有源传感器的两个夹紧端均添加了两个完整的p-SOI压阻惠斯通电桥。为了实现被动力传感器,使用胶和光刻胶作为连接材料将两个弹簧质量元件堆叠在一起。相应地,尽管当接触第二弹簧时似乎发生塑性变形,但是从无源堆叠传感器的第一测试中明显观察到扭结效应(即,刚度的急剧增加)。

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  • 来源
  • 会议地点 Barcelona(ES)
  • 作者单位

    Institute of Semiconductor Technology (IHT), Technische Universitaet Braunschweig, Hans- Sommer-Strasse 66, D-38106 Braunschweig, Germany,Laboratory of Emerging Nanometrology (LENA), Hans-Sommer-Strasse 66, D-38106 Braunschweig, Germany;

    Department 5.1 Surface Metrology, Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116 Braunschweig, Germany;

    Institute of Semiconductor Technology (IHT), Technische Universitaet Braunschweig, Hans- Sommer-Strasse 66, D-38106 Braunschweig, Germany;

    Department 5.1 Surface Metrology, Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116 Braunschweig, Germany;

    CiS Forschungsinstitut fuer Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Strasse 14, D-99099 Erfurt, Germany;

    Institute of Semiconductor Technology (IHT), Technische Universitaet Braunschweig, Hans- Sommer-Strasse 66, D-38106 Braunschweig, Germany,Laboratory of Emerging Nanometrology (LENA), Hans-Sommer-Strasse 66, D-38106 Braunschweig, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    microforce sensors; meander spring; deep reactive ion etching (DRIE); piezoresistive Wheatstone bridge; joining technique;

    机译:微力传感器;蜿蜒的春天深度反应离子刻蚀(DRIE);压阻惠斯通电桥;连接技术;

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