CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-LETI, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-LETI, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-LETI, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-LETI, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-LETI, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
Institute for Quantum Electronic, ETH Zurich, CH-8093 Zurich, Switzerland;
laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen, Switzerland;
laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen, Switzerland;
CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-LETI, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-LETI, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
CEA-INAC, Universite Grenoble Alpes, F-38054 Grenoble Cedex, France;
Germanium; strain; micro-bridges; micro-diffraction; GeOI; Raman; processing; photonics;
机译:在200 Mm Geoi晶圆的Si工艺生产线中制造的具有高k和金属栅极的105 Nm栅极长度Pmosfets
机译:高质量双层伯纳石墨烯的同步生长:从六角形单晶域到晶圆级均质膜。
机译:该工艺可为GaN蓝/白LED带来大型,高质量的晶圆
机译:高质量和均匀的200毫米GEOI晶片加工用于GE的高应变诱导
机译:热等静压的钛铝钒钒基均质高梯度复合装甲材料的加工,高应变率性能和弹道性能。
机译:金属有机化学气相沉积法在Ni(111)上高质量地生长六方氮化硼的晶片规模和选择性区域
机译:石墨烯:高质量双层伯纳石墨烯的同步增长:从六边形单晶畴到晶圆级均匀薄膜(ADV。Funct。Matter。22/2017)
机译:均匀反应器处理:将液 - 固旋风分离器应用于均相反应器处理的考虑因素