Comparative Study on 1-THz Antenna-Coupled Bolometer with Various SOI-CMOS based Temperature Sensors: MOSFET, Diode, Resistor and Thermocouple

摘要

Room temperature terahertz bolometers were characterized with various silicon-on-insulator (SOI) CMOS temperature sensors (MOSFET, pn junction diode, resistor and thermocouple) by adopting the 1-THz antenna-coupled structure and assuming 0.6 μm SOI CMOS technology. Performance estimation in terms of responsivity (R_v) showed the largest value of 6.27 kV/W for MOSFET. The smallest response time (τ) of 2.34 μs was obtained for the resistive bolometer whereas the MOSFET showed 13.8 μs. One order of magnitude smaller noise equivalent power (NEP) than that of the resistive bolometer was estimated for the MOSFET. Current results suggest that the n-channel MOSFET bolometer can be a promising terahertz detector integrable with SOI technology.