Selective Polycrystalline Si and SiGe Deposition on Epitaxial SiInduced by B-Atomic Layer Doping

摘要

Selective polycrystalline growth is obtained by incorporation ofrnhigh level of B concentration at the interface between the Sirnsubstrate and the deposited Si layer using atomic layer dopingrn(ALD). The high doping concentration of B at the interface isrncovering the crystal information of the Si lattice resulting inrnpolycrystalline growth. B diffusion into deposited Si layer isrnpronounced by the transition from epitaxial Si growth tornpolycrystalline growth. Effective activation energy of the selectivernpolycrystalline Si growth on Si is not different from that on SiO2.rnThe transition from epitaxial growth to polycrystalline growth isrnobserved for B doses in the range of 2-4×1015 cm-2 as well forrnselective Si as for selective Si0.8Ge0.2 growth.