Pulsed laser-induced phase changes in CdZnTe: a computational analysis

摘要

A computational model of rapid phase transitions in binary semiconducting systems is employed to analyze the effect of the laser pulse wavelength and time duration on CdZnTe melting, crystallization and evaporation. A set of numerical simulations of pulsed laser-induced phase change processes in CdZnTe is done using the computer code developed by the authors. Temperature and concentration fields, positions and velocities of the solid/liquid and liquid/vapor phase interfaces, and time-resolved incident laser reflectivities are calculated as functions of the laser energy density for two types of lasers, namely the Nd:YAG laser (16 ns FWHM pulse duration, 266, 355, 532 nm wavelengths) and ruby laser (80 ns FWHM, 694 nm). The results obtained for both the lasers are discussed and recommendations for the optimization of experimental setups are given.