DEVELOPMENT FOR LOW-K/BARRIER LAYER SLURRIES

摘要

Due to the increased interest in incorporating low-k materials into the Cu damascene structure; there has been the emergence of new requirements for Barrier Layer CMP slurries. These slurries must provide the required removal rates on the low-k material, on Cu and Ta/TaN to achieve the desired topography. Due to the complexity of these films, there is more focus with the consumable suppliers to develop an overall process for the polishing and cleaning of these new films. Low k materials investigated in this paper are FSG, carbon-doped oxide/organo-silicate glass and porous low-k films.