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A low-noise, 15μm pixel-pitch, 640x512 hybrid InGaAs image sensor for night vision

机译:低噪声,15μm像素间距,640x512混合InGaAs图像传感器,用于夜视

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Hybrid InGaAs focal plane arrays are very interesting for night vision because they can benefit from the nightglow emission in the Short Wave Infrared band. Through a collaboration between III-V Lab and CEA-Leti, a 640×512 InGaAs image sensor with 15μm pixel pitch has been developed. The good crystalline quality of the InGaAs detectors opens the door to low dark current (around 20nA/cm~2 at room temperature and -0.1V bias) as required for low light level imaging. In addition, the InP substrate can be removed to extend the detection range towards the visible spectrum. A custom readout IC (ROIC) has been designed in a standard CMOS 0.18μm technology. The pixel circuit is based on a capacitive transimpedance amplifier (CTIA) with two selectable charge-to-voltage conversion gains. Relying on a thorough noise analysis, this input stage has been optimized to deliver low-noise performance in high-gain mode with a reasonable concession on dynamic range. The exposure time can be maximized up to the frame period thanks to a rolling shutter approach. The frame rate can be up to 120fps or 60fps if the Correlated Double Sampling (CDS) capability of the circuit is enabled. The first results show that the CDS is effective at removing the very low frequency noise present on the reference voltage in our test setup. In this way, the measured total dark noise is around 90 electrons in high-gain mode for 8.3ms exposure time. It is mainly dominated by the dark shot noise for a detector temperature settling around 30°C when not cooled. The readout noise measured with shorter exposure time is around 30 electrons for a dynamic range of 71 dB in high-gain mode and 108 electrons for 79dB in low-gain mode.
机译:混合InGaAs焦平面阵列对于夜视非常有趣,因为它们可以从短波红外波段的夜光发射中受益。通过III-V实验室与CEA-Leti的合作,已开发出像素间距为15μm的640×512 InGaAs图像传感器。 InGaAs探测器的良好晶体质量为低光水平成像所需的低暗电流(室温和-0.1V偏压下约为20nA / cm〜2)打开了大门。另外,可以去除InP衬底以将检测范围扩展到可见光谱。定制的读取IC(ROIC)已采用标准CMOS0.18μm技术进行设计。像素电路基于具有两个可选电荷到电压转换增益的电容跨阻放大器(CTIA)。依靠全面的噪声分析,该输入级经过优化,可在高增益模式下提供低噪声性能,并在动态范围上有合理的让步。借助卷帘快门方法,可以在整个帧周期内将曝光时间最大化。如果启用了电路的相关双采样(CDS)功能,则帧速率可以高达120fps或60fps。最初的结果表明,在我们的测试设置中,CDS可有效消除参考电压上存在的非常低的频率噪声。这样,在8.3ms的曝光时间内,高增益模式下测得的总暗噪声约为90个电子。当探测器温度未冷却时,其温度稳定在30°C左右,这主要是由暗噪声引起的。在高增益模式下,以71 dB的动态范围,用较短的曝光时间测得的读出噪声约为30个电子,而在低增益模式下,对于79dB的动态范围为108个电子。

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