Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser

摘要

This work reports single-frequency laser oscillation at λ = 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (λ = 501.5 nm) with an output power around 60 mW.