Fabrication and performance of In_(0.66)Ga_(0.34)As_(0.73)P_(0.27)/In_(0.89)Ga_(0.11)As_(0.23)P_(0.77) multiple-quantum-well lasers

摘要

An In_(0.66)Ga_(0.34)As_(0.73)P_(0.27)/In_(0.89)Ga_(0.11)As_(0.23)P_(0.77) quantum-well laser structure was grown on an InP substrate. The whole structure was grown by metalorganic chemical vapor deposition. The material quality was characterized by double crystal X-ray diffraction and room-temperature photoluminescence spectra. It shows that the active region's optical properties are comparable to that InGaAs/InGaAsP quantum-well lasers. Meanwhile, we fabricated an InP-based InGaAsP/InGaAsP multiple quantum wells laser at 1.3 urn wavelength. Under quasi-continuous wave condition, a threshold current of 400 mA and the single side slope efficiency of 0.18 mW/mA are achieved for a broad area device with 100 μm-wide strip and 500 μm-long cavity at room-temperature. The wavelength of emission spectrum is 1305 nm. When the injection current is 700 mA, FWHM of the envelope is 3.6 nm.