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Spin-Dependent Optical Processes in Ⅱ-Ⅵ Diluted Magnetic Semiconductor Nanostructures

机译:Ⅱ-Ⅵ稀释的磁性半导体纳米结构中自旋相关的光学过程

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Nanostructures of diluted magnetic semiconductors have potential possibility for the spin electronics application due to their large magneto-optical effects and the quantum confinement effects for band electrons. We have fabricated quantum wells and quantum dots by Ⅱ-Ⅵ diluted magnetic semiconductors of Cd_(1-x)Mn_xTe, Zn_(1-x)Mn_xTe and Zn_(1-x-y)Cd_yMn_xSe. These nanostructures showed spin injection, spin switching and ultrafast spin relaxation processes derived in the confined nanostructures. Hybrid structures consisting of diluted magnetic semiconductor and Co showed Mn spin polarizations induced by the Co wire shape.
机译:稀磁半导体的纳米结构由于其大的磁光效应和带电子的量子限制效应而具有自旋电子应用的潜在可能性。我们用Cd_(1-x)Mn_xTe,Zn_(1-x)Mn_xTe和Zn_(1-x-y)Cd_yMn_xSe的Ⅱ-Ⅵ稀释磁性半导体制造了量子阱和量子点。这些纳米结构显示出在受限的纳米结构中产生的自旋注入,自旋转换和超快自旋弛豫过程。由稀磁半导体和Co组成的混合结构显示出由Co线形状引起的Mn自旋极化。

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