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SURFACE MORPHOLOGY FOR HYDROGEN TRANSFERRED AND THINNED BY OXIDATION SOI LAYERS

机译:氧化SOI层转移和稀化氢的表面形态

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摘要

The aim of the effort was understanding of the surface morphology of (100) Si surface splitted by implanted hydrogen upon annealing, its change during thinning procedure with layer-by-layer oxidation, and ultimately exacting control over the surface and interface roughness. We present an experimental investigation of the surface evolution and scaling of SOI thin film surfaces during production and thinning, studied by AFM surface analysis using a box method as well as Fourier power spectrum determination. It was shown that as splitted surface has faceted structures due to heterogeneous nucleation of (111) microcracks during [110] cleavage front propagation.
机译:努力的目的是了解在退火后注入的氢使(100)Si表面分裂的表面形貌,在逐层氧化的减薄过程中其变化以及最终严格控制表面和界面粗糙度。我们介绍了在生产和减薄过程中对SOI薄膜表面的表面演变和结垢的实验研究,通过使用盒装方法的AFM表面分析以及傅立叶功率谱测定研究了SOI薄膜表面的结垢。结果表明,由于[110]劈裂锋面传播过程中(111)微裂纹的异质形核,劈裂的表面具有多面结构。

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