DIRECT WAFER FUSION OF GALLIUM ARSENIDE THIN FILM ON INDIUM PHOSPHIDE BY CHEMICAL AND PLASMA ACTIVATION

摘要

Gallium Arsenide (GaAs) thin film was directly bonded to Indium Phosphide by chemical and plasma activation. The combination of hydrofluoric acid and oxygen plasma yields good bond strength at room temperature. The wafer fusion was done at 220℃ for 45 minutes to atomically join the wafers. Wet chemical etching of AlAs removes the GaAs substrate leaving behind thin film GaAs robustly bonded to InP. The lifted off film exhibited mirror surface morphology. The thin GaAs film bonded by this technique was studied for its quality by photoluminescence, scanning electron microscopy and micro-Raman. The studies revealed that the film exhibited excellent crystal quality and this process technology would be well suited for optoelectronics and photonics integrated circuit.