C ATOMIC ORDER DOPING AT Si/Si_(1-x)Ge_xSi HETEROINTERFACE AND IMPROVEMENT OF THERMAL STABILITY

摘要

Formation of Si/Si_(0.5)Ge_(0.5)/Si(100) epitaxial hetero-structure by low pressure chemical vapor deposition and effect of the atomic layer order doping of C on thermal stability are investigated. The intermixing between Si and Ge during heat treatment at 700-750℃ is scarcely suppressed by the continuously C doped Si/Si_(0.5)Ge_(0.5)(C)(C fraction 0.006)/Si heterostructure. On the other hand, atomic layer order C delta doping at the heterointerfaces effectively suppresses the intermixing even for the C atomic amount of 1.6x10~(13) cm~(-2).