DESIGN, FABRICATION AND OPERATION OF SUB-65NM STRAINED-SI/SI_(1-X)GE_X MOSFETS

摘要

We report the design, fabrication and operation of sub-65nm strained-Si/SiGe devices with enhanced drive current and excellent short-channel control. This was achieved with successful source/drain designs that are based on a detailed understanding of dopant diffusion in strained-Si/SiGe. Important process and device issues arising from Ge diffusion, threading dislocations, and misfit dislocations are also highlighted.